A. the full English name of "SLC" is "Single-Level Cell" (that is, single-storey storage), also known as "1bit/cell", which is mainly used by Samsung, Hynix, Miguang, Toshiba, etc. SLC technology is characterized by the fact that the oxide film in the floating gate and the source is thinner. In this way, the stored charge can be eliminated by applying voltage to the charge of the floating gate and then through the source, when the data is written. A unit of information can be stored, which can provide rapid programming and reading, but this technology is constrained by the "Silicon efficiency" problem and must be enhanced by the more advanced process enhancement technology, (Process enhancements), in order to upgrade the SLC process technology.
SLC features: fast operation and reaction, long service life, very expensive, about three times the price of "MLC", about 100, 000 writes (erase) life.
B. the full English name of "MLC" is "Multi-Level Cell" (that is, multi-layered storage), also known as "2bit/cell", which is mainly used by Toshiba, Renesas and Samsung. Intel (Intel) first developed MLC, in September 1997, which is to store two units of information in a FloatingGate (the portion of a flash memory cell that stores charges) and then use the charge of a different potential (Level). Read and write accurately through voltage control stored in memory. MLC uses a large number of voltage levels, each cell stores two bits of data, the data density is relatively high. The SLC schema has two values, 0 and 1, and the MLC schema can store more than four values at a time, so the MLC schema can have a better storage density.
MLC characteristics: general operating and reaction speed, general service life, general purchase price, about 3000 to 10000 write (erasure) life.
C. the full English name of "TLC" is "Triple-Level Cell", also known as "3bit/cell," and some Flash manufacturers call it "8LC". Although the storage capacity of TLC chips becomes larger and the cost is much lower, the performance of TLC chips is also greatly compromised. Therefore, it can only be used on low-level NAND Flash-related products, such as low-speed flash memory card, small memory card microSD or portable disk, etc.
TLC features: it has the slowest running and reaction speed, the shortest life span, and the cheapest, about 500 writes (erasure) life, to the current position, no manufacturer has been able to do 1000 writes (erasure).
U disk boot brief description: flash memory life refers to the number of writes (erases), not the number of readouts, because reading has little impact on the life of the u-disk chip.
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